Temperature sensitivity of resistance of VO2 polycrystalline films formed by modified ion beam enhanced deposition

被引:27
作者
Li, JH [1 ]
Yuan, NY [1 ]
机构
[1] Jiangsu Polytech Univ, Dept Informat Sci, Changzhou 213016, Peoples R China
基金
中国国家自然科学基金;
关键词
VO2 polycrystalline film; ion beam enhanced deposition; temperature coefficient of resistance;
D O I
10.1016/j.apsusc.2004.03.227
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
VO2 polycrystalline films were directly prepared from V2O5 powder using modified ion beam enhanced deposition (IBED) method after appropriate annealing. Test results showed that IBED VO2 polycrystalline films have a single orientation, an evident phase transition, a compact structure, and favorable processing properties. The temperature coefficient of resistance (TCR) of the films was up to more than 4%/K, and the IBED VO2 films were firmly adhered to the substrate. The mechanism of the IBED films with higher TCR could be explained as following. The oxygen vacancies and grain boundaries in the films were decreased due to the IBED technology. With a single crystal orientation and dense texture, the conduction activation energy of the IBED VO2 polycrystalline films was closer to that of VO2 single crystal in the semiconductor phase as compared with VOx films formed by other methods. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:252 / 257
页数:6
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