Preparation of vanadium dioxide thin film with high temperature coefficient of resistance from V2O5 powder by ion beam enhanced deposition

被引:13
作者
Li, JH [1 ]
Yuan, NY
Chan, HLW
Lin, CL
机构
[1] Jiangsu Inst Petrochem Technol, Dept Informat Sci, Changzhou 213016, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[3] Hong Kong Polytech Univ, Ctr Mat Res, Kowloon, Hong Kong, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[5] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
关键词
ion beam enhanced deposition; vanadium dioxide thin film; thermal coefficient of resistance;
D O I
10.7498/aps.51.1788
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A new method was employed to prepare VO2 thin film directly from V2O5 powder. Pressed V2O5 powder of 99.7% purity was used as sputtering target by argon ion beam. The hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. The bombardment of Ar+ could break V-O bond of V2O5 molecules in the deposited film and the implanted H+ resulting in deoxidization of V2O5 to VO2 thin film. After annealing, VO2 film with temperature coefficient of resistance (TCR) as high as 4% was obtained. The TCR increasing was due to the stress introduced in film by implantation of argon ions with high doses, which decreases the transition temperature of the VO2 film by ion beam enhanced deposition and the enlarged slope of resistance-temperature curve.
引用
收藏
页码:1788 / 1792
页数:5
相关论文
共 21 条
[1]   Uncooled IR Imaging: technology for the next generation [J].
Balcerak, RS .
INFRARED TECHNOLOGY AND APPLICATIONS XXV, 1999, 3698 :110-118
[2]   PULSED-LASER DEPOSITION OF ORIENTED VO2 THIN-FILMS ON R-CUT SAPPHIRE SUBSTRATES [J].
BOREK, M ;
QIAN, F ;
NAGABUSHNAM, V ;
SINGH, RK .
APPLIED PHYSICS LETTERS, 1993, 63 (24) :3288-3290
[3]   VO2 thin films:: growth and the effect of applied strain on their resistance [J].
Bowman, RM ;
Gregg, JM .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1998, 9 (03) :187-191
[4]   W- and F-doped VO2 films studied by photoelectron spectrometry [J].
Burkhardt, W ;
Christmann, T ;
Meyer, BK ;
Niessner, W ;
Schalch, D ;
Scharmann, A .
THIN SOLID FILMS, 1999, 345 (02) :229-235
[5]   INFLUENCE OF ION-BEAM PARAMETERS ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ION-ASSISTED REACTIVELY EVAPORATED VANADIUM DIOXIDE THIN-FILMS [J].
CASE, FC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1762-1766
[6]   EFFECTS OF OXYGEN IN ION-BEAM SPUTTER DEPOSITION OF VANADIUM-OXIDE [J].
CHAIN, EE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1987, 5 (04) :1836-1839
[7]   Characterizations of VO2-based uncooled microbolometer linear array [J].
Chen, CH ;
Yi, XJ ;
Zhao, XR ;
Xiong, BF .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 90 (03) :212-214
[8]   Structure characterization of vanadium oxide thin films prepared by magnetron sputtering methods [J].
Cui, JZ ;
Da, DA ;
Jiang, WS .
APPLIED SURFACE SCIENCE, 1998, 133 (03) :225-229
[9]  
CUI JZ, 1998, ACTA PHYS SINICA, V47, P454
[10]   Plasmon excitation in vanadium dioxide films [J].
Felde, B ;
Niessner, W ;
Schalch, D ;
Scharmann, A ;
Werling, M .
THIN SOLID FILMS, 1997, 305 (1-2) :61-65