Preparation of vanadium dioxide thin film with high temperature coefficient of resistance from V2O5 powder by ion beam enhanced deposition

A new method was employed to prepare VO2 thin film directly from V2O5 powder. Pressed V2O5 powder of 99.7% purity was used as sputtering target by argon ion beam. The hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. The bombardment of Ar+ could break V-O bond of V2O5 molecules in the deposited film and the implanted H+ resulting in deoxidization of V2O5 to VO2 thin film. After annealing, VO2 film with temperature coefficient of resistance (TCR) as high as 4% was obtained. The TCR increasing was due to the stress introduced in film by implantation of argon ions with high doses, which decreases the transition temperature of the VO2 film by ion beam enhanced deposition and the enlarged slope of resistance-temperature curve.