A monolithically integrated surface micromachined touch mode capacitive pressure sensor

被引：33

作者：

Guo, SW ^{[1
]}

Guo, J ^{[1
]}

Ko, WH ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Elect Engn Syst & Comp Engn & Sci, Cleveland, OH 44106 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 80卷 / 03期

基金：

美国国家航空航天局;

关键词：

integrated sensor; capacitive pressure sensor; touch mode; capacitive sensors; surface micromachining technology; CMOS;

D O I：

10.1016/S0924-4247(99)00344-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated surface micromachined touch mode capacitive pressure sensor and its interface circuits are presented. The device includes the capacitance to voltage, and capacitance to frequency converters on the same chip. The sensor is fabricated using a surface micromachining technology, which is processed simultaneously with a conventional 2.0-mu m double-poly, double-metal n-well CMOS process. The performance of the integrated sensor meets the design specifications of good linearity and good stability. Evaluation results on the completed 'sensor and circuit' chip are presented. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：224 / 232

页数：9

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