Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers

被引：62

作者：

Deng, J. J. ^{[1
]}

Zhao, J. H. ^{[1
]}

Bi, J. F. ^{[1
]}

Niu, Z. C. ^{[1
]}

Yang, F. H. ^{[1
]}

Wu, X. G. ^{[1
]}

Zheng, H. Z. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2192247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zinc-blende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on (In,Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy. Compared with the typical thickness [2-3 ML (ML denotes monolayers)] of zb-CrSb grown directly on GaAs, the thickness of zb-CrSb grown on (In,Ga)As has been increased largely; the maximum can be up to similar to 9 ML. High-resolution cross sectional transmission electron microscopy images show that the zb-CrSb layer is combined with (In,Ga)As buffer layer without any dislocations at the interface. (C) 2006 American Institute of Physics.

引用

页数：3

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