Semiconductor spintronics

被引：110

作者：

Akinaga, H ^{[1
]}

Ohno, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba 3058562, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2002年 / 1卷 / 01期

基金：

日本学术振兴会;

关键词：

ferromagnetic semiconductors; magnetooptic (MO) devices; magnetoresistive devices; quantum information; spin coherence;

D O I：

10.1109/TNANO.2002.1005423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review recent, progress made in the field of semiconductor spintronics, a branch of semiconductor electronics where both charge and spin degrees of freedom play an important role in realizing unique functionalities. We first describe the new spin-dependent phenomena. found in semiconductors including carrier-induced ferromagnetism in III-V compounds, followed by an account of our current understanding of such spin-dependent phenomena. Then we summarize the challenges the semiconductor spintronics has to meet in order for it to be a success as "electronics."

引用

页码：19 / 31

页数：13

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