Semiconductor spintronics

被引：110

作者：

Akinaga, H ^{[1
]}

Ohno, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba 3058562, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2002年 / 1卷 / 01期

基金：

日本学术振兴会;

关键词：

ferromagnetic semiconductors; magnetooptic (MO) devices; magnetoresistive devices; quantum information; spin coherence;

D O I：

10.1109/TNANO.2002.1005423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review recent, progress made in the field of semiconductor spintronics, a branch of semiconductor electronics where both charge and spin degrees of freedom play an important role in realizing unique functionalities. We first describe the new spin-dependent phenomena. found in semiconductors including carrier-induced ferromagnetism in III-V compounds, followed by an account of our current understanding of such spin-dependent phenomena. Then we summarize the challenges the semiconductor spintronics has to meet in order for it to be a success as "electronics."

引用

页码：19 / 31

页数：13

共 139 条

[91] Electric-field control of ferromagnetism
Ohno, H
Chiba, D
Matsukura, F
Omiya, T
Abe, E
Dietl, T
Ohno, Y
Ohtani, K
[J]. NATURE, 2000, 408 (6815) : 944 - 946
[92] OHNO H, 2002, JPN SOC APPL PHYS IN, V4, P4
[93] Spin relaxation in GaAs(110) quantum wells
Ohno, Y
Terauchi, R
Adachi, T
Matsukura, F
Ohno, H
[J]. PHYSICAL REVIEW LETTERS, 1999, 83 (20) : 4196 - 4199
[94] Electrical spin injection in a ferromagnetic semiconductor heterostructure
Ohno, Y
Young, DK
Beschoten, B
Matsukura, F
Ohno, H
Awschalom, DD
[J]. NATURE, 1999, 402 (6763) : 790 - 792
[95] Core-level photoemission study of Ga1-xMnxAs
Okabayashi, J
Kimura, A
Rader, O
Mizokawa, T
Fujimori, A
[J]. PHYSICAL REVIEW B, 1998, 58 (08): : R4211 - R4214
[96] ONODERA K, 2000, MAT INTEGRATION, V13, P57
[97] Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN
Overberg, ME
Abernathy, CR
Pearton, SJ
Theodoropoulou, NA
McCarthy, KT
Hebard, AF
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (09) : 1312 - 1314
[98] A group-IV ferromagnetic semiconductor:: MnxGe1-x
Park, YD
Hanbicki, AT
Erwin, SC
Hellberg, CS
Sullivan, JM
Mattson, JE
Ambrose, TF
Wilson, A
Spanos, G
Jonker, BT
[J]. SCIENCE, 2002, 295 (5555) : 651 - 654
[99] Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
Potashnik, SJ
Ku, KC
Chun, SH
Berry, JJ
Samarth, N
Schiffer, P
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1495 - 1497
[100] Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
Rashba, EI
[J]. PHYSICAL REVIEW B, 2000, 62 (24) : R16267 - R16270

← 5 6 7 8 9 10 11 12 13 14 →