Progress in the deposition of MgB2 thin films

被引:27
作者
Xi, XX [1 ]
Pogrebnyakov, AV
Zeng, XH
Redwing, JM
Xu, SY
Li, Q
Liu, ZK
Lettieri, J
Vaithyanathan, V
Schlom, DG
Christen, HM
Zhai, HY
Goyal, A
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[4] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA
[5] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
关键词
D O I
10.1088/0953-2048/17/5/021
中图分类号
O59 [应用物理学];
学科分类号
摘要
An MgB2 thin film deposition technology is the first critical step in the development of superconducting electronics utilizing the 39 K superconductor. It turned out to be a challenging task due to the volatility of Mg and phase stability of MgB2, the low sticking coefficients of Mg at elevated temperatures, and the reactivity of Mg with oxygen. A brief overview of current deposition techniques is provided here from a thermodynamic perspective, with an emphasis on a very successful technique for high quality in situ epitaxial MgB2 films, the hybrid physical-chemical vapour deposition. Examples of heterostructures of MgB2 with other materials are also presented.
引用
收藏
页码:S196 / S201
页数:6
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