Progress in the deposition of MgB2 thin films

被引：27

作者：

Xi, XX ^{[1
]}

Pogrebnyakov, AV

Zeng, XH

Redwing, JM

Xu, SY

Li, Q

Liu, ZK

Lettieri, J

Vaithyanathan, V

Schlom, DG

Christen, HM

Zhai, HY

Goyal, A

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[4] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA

[5] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2004年 / 17卷 / 05期

关键词：

D O I：

10.1088/0953-2048/17/5/021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An MgB2 thin film deposition technology is the first critical step in the development of superconducting electronics utilizing the 39 K superconductor. It turned out to be a challenging task due to the volatility of Mg and phase stability of MgB2, the low sticking coefficients of Mg at elevated temperatures, and the reactivity of Mg with oxygen. A brief overview of current deposition techniques is provided here from a thermodynamic perspective, with an emphasis on a very successful technique for high quality in situ epitaxial MgB2 films, the hybrid physical-chemical vapour deposition. Examples of heterostructures of MgB2 with other materials are also presented.

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页码：S196 / S201

页数：6

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