Quantum fluctuations in atomistic semiconductor devices

被引：6

作者：

Barker, JR ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 3-6期

关键词：

atomistic silicon devices; quantum transport; Green functions;

D O I：

10.1016/j.spmi.2004.03.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 [凝聚态物理];

摘要：

Atomistic Green function simulations of model 25 nm x 25 nm Si MOSFETs predict strong fluctuation effects derived from mode fluctuations in the quantum transport through the inhomogeneous 2DEG channel caused by the spatial distribution of non-self-averaged discrete dopants. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：361 / 366

页数：6

共 7 条

[1]

Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxide [J].

Asenov, A ;

Saini, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (04) :805-812

[2]

Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices [J].

Barker, John R. .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) :153-161

[3]

A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions [J].

Barker, JR .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2) :62-70

[4]

Normal vortex states and their application in mesoscopic semiconductor devices [J].

Barker, JR .

MICROELECTRONIC ENGINEERING, 2002, 63 (1-3) :223-231

[5]

NGUYEN N, 1984, THESIS STANFORD U

[6]

SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

PHYSICAL REVIEW B, 1972, 5 (12) :4891-&

[7]

Two-dimensional quantum mechanical modeling of nanotransistors [J].

Svizhenko, A ;

Anantram, MP ;

Govindan, TR ;

Biegel, B ;

Venugopal, R .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :2343-2354

← 1 →