Polysilicon gate enhancement of the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxide

被引:45
作者
Asenov, A [1 ]
Saini, S
机构
[1] Univ Glasgow, Dept Elect & Elect Engn, Device Modeling Grp, Glasgow G12 8LT, Lanark, Scotland
[2] NASA, Ames Res Ctr, Numer Aerosp Simulat Syst Div, Moffett Field, CA 94035 USA
关键词
doping; fluctuations; MOSFET; semiconductor device simulation; silicon devices; threshold;
D O I
10.1109/16.830997
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, ne investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides, The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described elsewhere [1], MOSFET's with uniform channel doping and with tom doped epitaxial channels have been investigated, The simulations reveal that even in de rices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled to thickness in the range of 1-2 nm, Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide thickness has a dominant effect in the investigated range of devices, Simulations illustrating the effect of the polysilicon grain boundaries on the threshold voltage variation are also presented.
引用
收藏
页码:805 / 812
页数:8
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