Reverse-poling effects on charge retention in Pb(Zr,Ti)O3(001)/LaNiO3(001) heterostructures

被引：53

作者：

Jo, W

Kim, DC

Hong, JW

机构：

[1] LG Corp Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea

[2] PSIA Corp, Seoul 137070, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.125763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report charge retention in preferentially c-axis oriented ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films on LaNiO3 by electrostatic force microscopy. The surface charge density of the PZT films was observed as a function of time in a selected area where a region is single poled and another region is reverse poled. Retention behaviors of the regions are very different: the single-poled region shows a declined response and the reverse-poled region reveals a retained characteristic. Decay and retention mechanisms of the regions are explained by space-charge redistribution and trapping of defects in the films. (C) 2000 American Institute of Physics. [S0003-6951(00)04103-6].

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页码：390 / 392

页数：3

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