Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon

被引：9

作者：

Borghesi, A

Sassella, A

Porrini, M

Gambaro, D

Olmo, M

机构：

[1] Univ Milano Bicocca, INFM, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] MEMC Elect Mat, I-39012 Merano, BZ, Italy

[4] MEMC Elect Mat, I-28100 Novara, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 73卷 / 1-3期

关键词：

silicon; interstitial oxygen; oxygen precipitation; infrared spectroscopy;

D O I：

10.1016/S0921-5107(99)00461-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A study of the optical response in the infrared (IR) spectral region of oxygen precipitates in silicon is performed at liquid helium temperature. The measurements concern a set of samples with the same density of precipitates of different dimensions and a second set of samples with different densities of precipitates of equal dimension. Two main shapes of precipitates are detected in both sets, with different behavior in terms of volume fractions occupied by each of them in the sample as a function of the thermal treatments performed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：149 / 153

页数：5

共 10 条

[1] INTERLABORATORY DETERMINATION OF THE CALIBRATION FACTOR FOR THE MEASUREMENT OF THE INTERSTITIAL OXYGEN-CONTENT OF SILICON BY INFRARED-ABSORPTION [J].