Very low saturation intensity and ultrafast response of 1.5μm intersubband absorption in n-doped InGaAs/AlAsSb MQW

被引：4

作者：

Akiyama, T ^{[1
]}

Neogi, A ^{[1
]}

Yoshida, H ^{[1
]}

Wada, O ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 04期

关键词：

D O I：

10.1049/el:20000306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is theoretically shown that an extremely low saturation intensity (< 0.05mW/mu m(2)) as well as an ultrafast (similar to 1.3ps) response are possible in 1.5 mu m intersubband absorption in n-doped InGaAs/AlAsSb multiple quantum wells with electron concentration of similar to 1 x 10(19)cm(-3). Such a low saturation intensity is ascribed to the delta-function-like absorption spectra of the intersubband transition and a reduced dephasing rate achieved by high doping.

引用

页码：362 / 364

页数：3

共 3 条

[1] Relaxation time of short wavelength intersubband transition in InGaAs/AlAs quantum wells [J].

Asano, T ;

Noda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11) :6020-6024

[2] 1.45 μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy [J].

Mozume, T ;

Yoshida, H ;

Neogi, A ;

Kudo, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B) :1286-1289

[3] Intersubband absorption saturation study of narrow III-V multiple quantum wells in the lambda=2.8-9 mu m spectral range [J].

Vodopyanov, KL ;

Chazapis, V ;

Phillips, CC ;

Sung, B ;

Harris, JS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (06) :708-714

← 1 →