The behavior of narrow-width SOI MOSFET's with MESA isolation

Narrow-width effects in thin-film silicon-on-insulator (SOI) MOSFET's with MESA isolation technology have been studied theoretically and experimentally. As the channel width of the MOSFET is scaled down, the gate control of the channel potential is enhanced. It leads to the suppression of drain current dependence on substrate bias and punchthrough effect in narrow-width devices. The variation of threshold voltage with the channel width is also studied and is found to hare a strong dependence on thickness of silicon film, interface charges in the buried oxide and channel type of SOI MOSFET.