RECESSED-CHANNEL STRUCTURE FOR FABRICATING ULTRATHIN SOI MOSFET WITH LOW SERIES RESISTANCE

被引：41

作者：

CHAN, MS ^{[1
]}

ASSADERAGHI, F ^{[1
]}

PARKE, SA ^{[1
]}

HU, CM ^{[1
]}

KO, PK ^{[1
]}

机构：

[1] IBM CORP,FISHKILL,NY

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 01期

关键词：

D O I：

10.1109/55.289474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new recessed-channel SOI (RCSOI) technology has been developed for fabricating ultrathin SOI MOSFET's with low source/drain series resistance. Thin-film fully depleted SOI MOSFET's with channel film thickness of 72 nm have been fabricated with the RCSOI technology. The new structure demonstrated a 70% reduction in source/drain series resistance compared with conventional processes. In the deep-submicron region, more than 80% improvement in saturation drain current and transconductance over conventional devices was achieved using the RCSOI technology. The new technology would also facilitate the use of silicide for further reducing the series resistance.

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页码：22 / 24

页数：3

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