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CURRENT-DRIVE ENHANCEMENT LIMITED BY CARRIER VELOCITY SATURATION IN DEEP-SUBMICROMETER FULLY DEPLETED SOI MOSFETS

被引：7
作者：
FOSSUM, JG
KRISHNAN, S
机构：
[1] VLSI TCAD Group, Department of Electrical Engineering, University of Florida, Gainesville, FL
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 02期
关键词：
D O I：
10.1109/16.182529
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Simulations and measurements of SOI MOSFET's are presented with analytical insight to reveal the severe limitation of current-drive enhancement caused by carrier velocity saturation in the deep-submicrometer fully depleted device. For L = 0.1 mum, the enhancement, which tends to result from the suppressed body charge and electric field in the thin-film device, is virtually negated by the velocity saturation driven by the high longitudinal electric field.
引用
收藏
页码：457 / 459
页数：3
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