SUBFEMTOJOULE DEEP SUBMICROMETER-GATE CMOS BUILT IN ULTRA-THIN SI FILM ON SIMOX SUBSTRATES

Deep submicrometer gate MOSFET with fully depleted channel was fabricated using ultra-thin Si film on SIMOX (Separation by IMplanted OXygen) substrates. Ultra-thin Si films such as 30 nm in thickness were shown to be effective to suppress short-channel effects, thus deep submicrometer gate MOSFET's with steep subthreshold slope and threshld voltage insensitive to drain voltage were realized. Fifty-one stages CMOS ring oscillators with 0.25-mu-m gate built in Si film of 100 nm in thickness showed delay per gate of 21.5 ps at room temperature for supply voltage of 2.5 V. With 30-nm Si film, CMOS ring oscillators demonstrated power-delay product of 0.5 fJ for supply voltage of 1.5 V also at room temperature.