Ultrahigh resolution of lead zirconate titanate 30/70 domains as imaged by piezoforce microscopy

被引：28

作者：

Dunn, S ^{[1
]}

Shaw, CP ^{[1
]}

Huang, Z ^{[1
]}

Whatmore, RW ^{[1
]}

机构：

[1] Cranfield Univ, Cranfield MK43 0AL, Beds, England

来源：

NANOTECHNOLOGY | 2002年 / 13卷 / 04期

关键词：

D O I：

10.1088/0957-4484/13/4/303

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Piezoforce microscopy (PFM) has been used to determine the domain structure of lead zirconate titanate (PZT) (30/70) on an indium tin oxide (ITO)/glass substrate with a TiO2 boundary layer. The PZT nucleates into the perovskite form in a random crystallographic manner, which leads to a random domain structure in the final film. Using PFM it has been possible to visualize the domain structure of the PZT and determine that the domain structure has features as fine as 8 nm herringbone patterns. The possible impact of these structures for future devices utilizing nanoscale features of PZT and especially FeRAM developments is highlighted.

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页码：456 / 459

页数：4

相关论文

共 34 条

[1] Patterning and switching of nano-size ferroelectric memory cells [J].

Alexe, M ;

Harnagea, C ;

Visinoiu, A ;

Pignolet, A ;

Hesse, D ;

Gösele, U .

SCRIPTA MATERIALIA, 2001, 44 (8-9) :1175-1179

[2] CONTRIBUTION OF ELECTRODES AND MICROSTRUCTURES TO THE ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILM CAPACITORS [J].

ALSHAREEF, HN ;

KINGON, AI ;

CHEN, X ;

BELLUR, KR ;

AUCIELLO, O .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (11) :2968-2975

[3] Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films [J].

Auciello, O ;

Gruverman, A ;

Tokumoto, H ;

Prakash, SA ;

Aggarwal, S ;

Ramesh, R .

MRS BULLETIN, 1998, 23 (01) :33-42

[4] ELECTRICAL AND RELIABILITY PROPERTIES OF PZT THIN-FILMS FOR ULSI DRAM APPLICATIONS [J].

CARRANO, J ;

SUDHAMA, C ;

CHIKARMANE, V ;

LEE, J ;

TASCH, A ;

SHEPHERD, W ;

ABT, N .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1991, 38 (06) :690-703

[5] Fatigued state of the Pt-PZT-Pt system [J].

Colla, EL ;

Tagantsev, AK ;

Taylor, DV ;

Kholkin, AL .

INTEGRATED FERROELECTRICS, 1997, 18 (1-4) :19-28

[6] Evaluation of PZT capacitors with Pt/SrRuO3 electrodes for FeRAM [J].

Cross, JS ;

Fujiki, M ;

Tsukada, M ;

Matsuura, K ;

Otani, S ;

Tomotani, M ;

Kataoka, Y ;

Kotaka, Y ;

Goto, Y .

INTEGRATED FERROELECTRICS, 1999, 25 (1-4) :605-+

[7] Substrate effects on domain structures of PZT 30/70 sol-gel films via PiezoAFM [J].

Dunn, S ;

Whatmore, RW .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2002, 22 (06) :825-833

[8] An examination of thin film lead scandium tantalum oxide (PST) using piezoAFM [J].

Dunn, S ;

De Kroon, AP ;

Whatmore, RW .

JOURNAL OF MATERIALS SCIENCE LETTERS, 2001, 20 (02) :179-181

[9] Investigations into local ferroelectric properties by atomic force microscopy [J].

Durkan, C ;

Welland, ME .

ULTRAMICROSCOPY, 2000, 82 (1-4) :141-148

[10]

Franke K., 1995, Ferroelectrics, V172, P397, DOI 10.1080/00150199508018503

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