Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors

被引：124

作者：

Takechi, Kazushige ^{[1
]}

Nakata, Mitsuru ^{[1
]}

Eguchi, Toshimasa ^{[1
]}

Yamaguchi, Hirotaka ^{[2
]}

Kaneko, Setsuo ^{[2
,3
]}

机构：

[1] Technol Res Assoc Adv Display Mat TRADIM, Tokyo 1840012, Japan

[2] NEC LCD Technol Ltd, Kawasaki, Kanagawa 2118666, Japan

[3] NEC Corp Ltd, Kawasaki, Kanagawa 2118666, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 01期

关键词：

ZNO FILMS; PHOTOCONDUCTIVITY; MOBILITY;

D O I：

10.1143/JJAP.48.010203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss the ultraviolet (UV) photo-field effects in amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si:H) TFTs. It is shown that the UV illumination induces a much more significant threshold voltage (VI) decrease and OFF-current increase for the a-IGZO TFTs; than for the a-Si:H TFTs. The significant V-t decrease is found to take several tens of min to return to the initial state after switching off the UV light. A qualitative model is introduced to explain the photoresponse unique to the a-IGZO TFTs. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 13 条

[1] Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent NiOx electrodes and an n-ZnO channel -: art. no. 076104 [J].

Bae, HS ;

Choi, CM ;

Kim, JH ;

Im, S .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (07)

[2] Photodetecting properties of ZnO-based thin-film transistors [J].

Bae, HS ;

Yoon, MH ;

Kim, JH ;

Im, S .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5313-5315

[3] Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays [J].

Chuang, Chiao-Shun ;

Fung, Tze-Ching ;

Mullins, Barry G. ;

Nomura, Kenji ;

Kamiya, Toshio ;

Shieh, Han-Ping David ;

Hosono, Hideo ;

Kanicki, Jerzy .

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III, 2008, 39 :1215-+

[4] Amorphous oxide semiconductors for high-performance flexible thin-film transistors [J].

Nomura, Kenji ;

Takagi, Akihiro ;

Kamiya, Toshio ;

Ohta, Hiromichi ;

Hirano, Masahiro ;

Hosono, Hideo .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (5B) :4303-4308

[5] ESR AND PHOTO-ESR INVESTIGATIONS OF THE V0+ CENTER IN ZNO RAW-MATERIAL AND LI-DOPED ZNO CERAMIC POWDER [J].

POPPL, A ;

VOLKEL, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (01) :195-204

[6] Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering [J].

Sharma, P ;

Sreenivas, K ;

Rao, KV .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :3963-3970

[7] Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films [J].

Studenikin, SA ;

Golego, N ;

Cocivera, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) :2413-2421

[8] Back-channel-oxidized a-Si: H thin-film transistors [J].

Takechi, K ;

Hirano, N ;

Hayama, H ;

Kaneko, S .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3993-3999

[9] Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4 Thin-Film Transistors [J].

Takechi, Kazushige ;

Nakata, Mitsuru ;

Eguchi, Toshimasa ;

Yamaguchi, Hirotaka ;

Kaneko, Setsuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (01)

[10]

TAYLOR GW, 1971, PHYS REV B, V4, P502

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