Valence state and local atomic structure of copper in Cu-implanted silica glass

被引:30
作者
d'Acapito, F
Mobilio, S
Battaglin, G
Cattaruzza, E
Gonella, F
Caccavale, F
Mazzoldi, P
Regnard, JR
机构
[1] GILDA CRG, European Synchrotron Radiat Facil, Ist Nazl Fis deUa Mat, F-38043 Grenoble, France
[2] Univ Venice, Dipartimento Chim Fis, Ist Nazl Fis deUa Mat, I-30123 Venice, Italy
[3] Univ Padua, Dipartimento Fis, Ist Nazl Fis duUa Mat, I-35131 Padua, Italy
[4] CEA Grenoble, Dept Rech Fondamentale Mat Condensee SP2M, F-38054 Grenoble, France
关键词
D O I
10.1063/1.372096
中图分类号
O59 [应用物理学];
学科分类号
摘要
Copper implanted fused silica samples were investigated for the first time by depth-selective x-ray absorption techniques. X-ray absorption near-edge structure and extended x-ray absorption fine structure measurements were performed using both x-ray fluorescence yield and conversion electron yield detection configurations, with the aim to discriminate the contribution of the copper ions at different depths. The copper species were found in both oxidized and metallic states. A dependence of the oxidized copper amount on the depth was detected. Compositional analyses were made by means of secondary ion mass and Rutherford backscattering spectrometries. A matrix-damage related oxidation effect on copper atoms was confirmed. (C) 2000 American Institute of Physics. [S0021-8979(00)03504-0].
引用
收藏
页码:1819 / 1824
页数:6
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