Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells

被引:69
作者
Friedman, DJ [1 ]
Kurtz, SR [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
PROGRESS IN PHOTOVOLTAICS | 2002年 / 10卷 / 05期
关键词
D O I
10.1002/pip.430
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The four-junction GaInP/GaAs/GaInNAs/Ge solar cell structure holds the promise of efficiencies exceeding those of the GaInP/GaAs/Ge three-junction cell, which at present is the benchmark for high-efficiency multijunction cell performance. The performance of GaInNAs junctions demonstrated to date has been insufficient for the realization of these projected efficiency gains, owing to poor minority-carrier properties in the GaInNAs. However, incremental improvements in the GaInNAs junctions have brought this breakeven point within sight. In this paper, we use a semi-empirical approach to estimate the efficiency of the GaInP/GaAs/GaInNAs/Ge four-junction solar cell structure as a function of the performance parameters of the GaInNAs third junction. The results provide guidance on the extent to which the current and voltage of present-day GaInNAs junctions will need to be improved in order for the resulting four-junction cell to realize its potential for efficiencies higher than that of GaInP/GaAs/Ge benchmark. Published in 2002 by John Wiley Sons, Ltd.
引用
收藏
页码:331 / 344
页数:14
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