Theoretical investigation of an intrinsic defect in SiC

被引：7

作者：

Gali, A

Deák, P

Son, NT

Janzén, E

机构：

[1] Budapest Univ Technol & Econ, Dept Atom Phys, HU-1111 Budapest, Hungary

[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

D-II center; intrinsic defects; Raman centers; theory;

D O I：

10.4028/www.scientific.net/MSF.389-393.477

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ab initio calculation of the local vibrational modes of a carbon pair in the silicon vacancy (V-Si+2C) shows that it cannot be the origin of the D-II photoluminescence (PL) center, however, it seems likely, that this defect gives rise to the Ramanpeaks observed at 1080 and 1435 cm(-1) in proton irradiated samples. Occupation levels of the V-Si+2C defect are also predicted to facilitate experimental confirmation.

引用

页码：477 / 480

页数：4

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