Self diffusion in SiC: the role of intrinsic point defects

被引：37

作者：

Mattausch, A ^{[1
]}

Bockstedte, M ^{[1
]}

Pankratov, O ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Theor Festkorperphys, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

ab initio defect-energetics; defect complexes; point defects; self-diffusion;

D O I：

10.4028/www.scientific.net/MSF.353-356.323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We apply an ab initio method to study the diffusion of intrinsic interstitials and vacancies in 3C-SiC. The structure and the energetics of the relevant transient complexes are calculated. We present possible migration paths and the corresponding barriers and discuss the dominant channels for self-diffusion.

引用

页码：323 / 326

页数：4

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