Transient enhanced diffusion of implanted boron in 4H-silicon carbide

Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several mu m into the samples when annealed at 1600 and 1700 degrees C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 degrees C is determined to 7x10(-12) cm(2)/s, which is 160 times larger than the equilibrium B diffusivity given in the literature. (C) 2000 American Institute of Physics. [S0003-6951(00)03111-9].