Performance of a 10 kHz laser-produced-plasma light source for EUV lithography

被引：5

作者：

Abe, T ^{[1
]}

Suganuma, T ^{[1
]}

Imai, Y ^{[1
]}

Someya, H ^{[1
]}

Hoshino, H ^{[1
]}

Nakano, M ^{[1
]}

Soumagne, G ^{[1
]}

Komori, H ^{[1
]}

Takabayashi, Y ^{[1
]}

Mizoguchi, H ^{[1
]}

Endo, A ^{[1
]}

Toyoda, K ^{[1
]}

Horiike, Y ^{[1
]}

机构：

[1] Extreme Ultraviolet Lithog Syst Dev Assoc, Hiratsuka Res & Dev Ctr, EUVA, Hiratsuka, Kanagawa 2548567, Japan

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VIII | 2004年 / 5374卷

关键词：

EUV lithography; laser produced plasma; xenon jet; MOPA system; deformable mirror;

D O I：

10.1117/12.536076

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The main technological challenge of a future extreme ultraviolet (EUV) light source is the required average power of 115W at the intermediate focus. High repetition rate laser produced plasma (LPP) sources are very promising to face this challenge. We report the current status of the laser produced light source system we started to develop in 2002. The system consists of the following main components: The plasma target is a liquid xenon jet with a maximum diameter of 50 micrometer and a velocity of more than 30 m/s. A Nd:YAG laser oscillating at 1064 nm produces the plasma. The laser is a master oscillator power amplifier (MOPA) configuration with a maximum repetition rate of 10 kHz and an average power of 1 kW. The EUV system currently delivers an average EUV in-band power of 4 W (2% bandwidth, 2pi sr) having a stability of 0.54% (1sigma, 50-pulse moving average). In order to evaluate a further increase of the repetition rate, xenon jet characteristics and EUV plasma images have been investigated at 10 kHz. In addition, a conversion efficiency of 0.67% (2% bw, 2pi sr) has been obtained at low repetition rate operation. This paper presents the progress of our LPP light source development.

引用

页码：160 / 167

页数：8

共 16 条

[1] Extreme ultraviolet sources for lithography applications [J].

Banine, V ;

Moors, R .

EMERGING LITHOGRAPHIC TECHNOLOGIES V, 2001, 4343 :203-214

[2] The relationship between an EUV source and the performance of an EUV lithographic system [J].

Banine, V ;

Benschop, J ;

Leenders, M ;

Moors, R .

EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 :126-135

[3]

ENDO A, EUV SOURC WORKSH CD

[4] Status of the liquid-xenon-jet laser-plasma source for EUV lithography [J].

Hansson, BAM ;

Rymell, L ;

Berglund, M ;

Hemberg, O .

EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 :102-109

[5]

HANSSON BAM, 2002, P 1 INT EUV LITH S C

[6]

HANSSON BAM, 2003, EUVL SOURC WORKSH CD

[7] Spatial emission characteristics of EUV plasma sources [J].

Mann, K ;

Kranzusch, S ;

Peth, C ;

Schürmann, MC ;

Missalla, T .

EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 :656-669

[8]

MCNAUGHT S, EUV SOURC WORKSH CD

[9]

OTA K, 2003, EUV SOURC WORKSH CD

[10] Interaction of a pulsed gas target with Nd-laser radiation and laser-produced plasma [J].

Ragozin, EN ;

Levashov, VE ;

Mednikov, KN ;

Pirozhkov, AS ;

Sasorov, PV .

ADVANCES IN LABORATORY-BASED X-RAY SOURCES AND OPTICS III, 2002, 4781 :17-25

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