Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition

SiC nanocrystalline films on Si substrates deposited using advanced electron-cyclotron-resonance chemical-vapor deposition exhibit intense visible light emission at room temperature under laser excitation. Continuous-wave and time-resolved photoluminescence measurements for these SiC films were carried out at room temperature. The photon energy of the dominant emission peaks is higher than the band gap of cubic SiC. Room-temperature optical absorption measurements show a clear blueshift of the band gap of the samples with a decrease of the average size of the nanoclusters, indicating an expected quantum-confinement effect. However, the emission spectra are basically independent of the size. Temporal evolution of the dominant emissions exhibits double-exponential decay processes. Two distinct decay times of similar to 200 ps and similar to 1 ns were identified, which are at least two orders of magnitude faster than that of the bound-exciton transitions in bulk 3C-SiC at low temperature. Strong light emissions and short decay times strongly suggest that the radiative recombinations may be from some direct transitions such as self-trapped excitons on the surface of the nanoclusters. (C) 2000 American Institute of Physics. [S0003-6951(00)04618-0].