Negative electron affinity observed in boron-doped p-type diamond films by scanning field emission spectroscopy

被引：21

作者：

Wang, WN

Fox, NA

Steeds, JW

Lin, SR

Butler, JE

机构：

[1] CHUNG SHAN INST SCI & TECHNOL, TAYUAN, TAIWAN

[2] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.363809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field emission properties of boron-doped diamond films were studied by combined scanning tunneling microscopy/spectroscopy and scanning field emission spectroscopy. A detailed spatial correlation between field emission sites and diamond morphology, surface work function, and diamond quality can be established by this technique. A possible indication of negative electron affinity of the (111) faces near the (111)/(111) and (111)/(100) grain boundaries and high defect sites of boron doped p-type diamond films were observed by field emission I-V (current-voltage) measurement. (C) 1996 American Institute of Physics.

引用

页码：6809 / 6812

页数：4

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