UV-VUV spectroscopic ellipsometry of ternary MgxZn1-xO (0≤x≤0.53) thin films

被引：39

作者：

Schmidt-Grund, R

Schubert, M

Rheinländer, B

Fritsch, D

Schmidt, H

Kaidashev, EM

Lorenz, M

Herzinger, CM

Grundmann, M

机构：

[1] Univ Leipzig, Fac Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

[2] JA Woollam Co Inc, Lincoln, NE 68508 USA

来源：

THIN SOLID FILMS | 2004年 / 455卷

关键词：

zinc oxide (ZnO); MgZnO; ZnMgO; ellipsometry; optical properties; dielectric function; vacuum ultraviolet;

D O I：

10.1016/j.tsf.2003.11.249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ordinary optical dielectric functions of pulsed-laser-deposition grown wurtzite c-plane MgxZn1-xO (0 less than or equal to x less than or equal to 0.53) thin films have been determined by using spectroscopic ellipsometry in the photon energy range from 4.5 to 9.5 eV. The dielectric functions reveal features which resemble those previously detected in uniaxial AlGaN and identified as E-1- and E-2-type band-to-band transitions with no remarkable dependence of the transition energy on Mg content x. The E-1- and E-2-type transitions for ZnO are compared with pseudopotential band-structure calculations. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：500 / 504

页数：5

共 20 条

[1] OPTICAL-CONSTANTS OF ZN1-XCDXTE TERNARY ALLOYS - EXPERIMENT AND MODELING [J].