Deposition of SiOx films from hexamethyldisiloxane/oxygen radiofrequency glow discharges:: Process optimization by plasma diagnostics

被引:74
作者
Creatore, M
Palumbo, F
d'Agostino, R
机构
[1] CNR, Ist Metodol Inorgan & Plasmi, Sez Terr Bari, I-70126 Bari, Italy
[2] Univ Bari, Dipartmento Chim, I-70126 Bari, Italy
关键词
PECVD; silicon dioxide; spectroscopic diagnostics; process control; gas barrier;
D O I
10.1023/A:1019942625607
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Optical emission and Fourier transform infrared absorption diagnostics have been carried out in hexamethyldisiloxane/oxygen RF discharges for studying the effects of the feed composition and the power on the deposition of SiO2-like thin films. Ex situ FTIR absorption has been utilized to monitor organic moieties and silanol groups in the film. It is shown that carbon-free films can be obtained by highly diluting the monomer in oxygen, while medium-to-high power is necessary to abate silanol groups. These two conditions represent the optimization criterion to obtain excellent barrier films for food packaging applications.
引用
收藏
页码:291 / 310
页数:20
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