Oligo-p-phenylevinylene organic thin-film transistors with chemically modified dielectric surfaces

被引：9

作者：

Gorjanc, TC

Lévesque, I ^{[1
]}

D'iorio, M

机构：

[1] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2004年 / 22卷 / 03期

关键词：

D O I：

10.1116/1.1647590

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this article, we report on organic thin film transistors based on a modified oligo-p-phenylevinylene oligomer, 1,4-bis[4-(4-octylphenyl)styryl]-benzene (oligo-S) on chemically modified gate dielectrics. Previously, we have reported on oligo-S devices fabricated on unmodified SiO2 surfaces [T. C. Gorjanc, I. Levesque, C. Py, and M. D'Iorio, Appl. Phys. Lett. (submitted)]. By using either hexamethyldisilazane (HMDS) or octadecyltrichlorosilane (OTS), both the hole mobility and on/off current ratios, I-on/off, have been increased. Maximum mobilities and on/off ratios of 0.14 cm(2)/Vs with I-on/off > 10(6) and 0.26 cm(2)/Vs with I-on/off > 10(7) were achieved with HMDS and OTS modified devices, respectively. (C) 2004 American Vacuum Society.

引用

页码：760 / 763

页数：4

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