Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

被引：609

作者：

Kroeger, M. ^{[1
]}

Hamwi, S. ^{[2
]}

Meyer, J. ^{[2
]}

Riedl, T. ^{[2
]}

Kowalsky, W. ^{[2
]}

Kahn, A. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38092 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 12期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; METAL-OXIDES; MOLYBDENUM OXIDE; INTERFACES; LAYER; XPS; AL; AG;

D O I：

10.1063/1.3231928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structures of vacuum-deposited molybdenum trioxide (MoO3) and of a typical MoO3/hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO3 are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO3 in hole injection in organic devices. The MoO3 films are strongly n-type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO3. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3231928]

引用

页数：3

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