Light-emitting organic field-effect transistor using an organic heterostructure within the transistor channel

被引：26

作者：

De Vusser, Stijn

Schols, Sarah

Steudel, Soeren

Verlaak, Stijn

Genoe, Jan

Oosterbaan, Wibren D.

Lutsen, Laurence

Vanderzande, Dirk

Heremans, Paul

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT, INSYS, B-3001 Louvain, Belgium

[3] Hasselt Univ, IMO, B-3590 Diepenbeek, Belgium

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期

关键词：

D O I：

10.1063/1.2392937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have realized a light-emitting organic field-effect transistor. Excitons are generated at the interface between a n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithography. The p-n heterostructure is at a distance of several microns from the metal electrodes. Therefore, the exciton and photon quenching in this device is reduced. Numerical simulations fit well with the experimental data and show that the light-emitting zone can move within the transistor channel. (c) 2006 American Institute of Physics.

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页数：3

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