Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption

被引：18

作者：

Bravo-Abad, J. ^{[1
]}

Ippen, E. P. ^{[1
]}

Soljacic, M. ^{[1
]}

机构：

[1] MIT, Elect Res Lab, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期

基金：

美国国家科学基金会;

关键词：

CMOS integrated circuits; elemental semiconductors; high-speed techniques; micromechanical resonators; optical resonators; photodetectors; photonic crystals; silicon; two-photon processes; WAVE-GUIDE PHOTODETECTORS; GERMANIUM;

D O I：

10.1063/1.3155135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we theoretically demonstrate that by dramatically enhancing two-photon absorption, all-silicon optical microresonators can act as efficient photodetectors for light at telecom wavelengths. We illustrate this approach with two specific designs based on a ring resonator and a photonic crystal cavity. The proposed scheme is fully compatible with standard silicon complementary metal-oxide-semiconductor processing technology, and thus, could contribute to the development of chip-scale integrated photodetectors based exclusively on silicon.

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