RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode

被引：28

作者：

Shimizu, N

Miyamoto, Y

Hirano, A

Sato, K

Ishibashi, T

机构：

[1] NTT, Network Innovat Labs, Yokosuka, Kanagawa 2390847, Japan

[2] NTT, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 08期

关键词：

Electric potential - Electric space charge - Semiconducting indium gallium arsenide - Semiconducting indium phosphide;

D O I：

10.1049/el:20000555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study into the RF output power limit for an InP/InGaAs unitravelling-carrier photodiode (UTC-PD) is presented. The measured 1 dB compression power of a UTC-PD at 40GHz was found to be as high as 9dBm, From the bios voltage dependence of the saturation power, it was found that the space charge effect in the colla-tor layer is mainly responsible for the RF saturation.

引用

页码：750 / 751

页数：2

共 6 条

[1]

ISHIBASHI T, 1997, OSA TOPS ULTRAFAST E, V13, P83

[2] 40-gbit/s TDM transmission technologies based on ultra-high-speed IC's [J].