InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C

被引：20

作者：

Kamp, M ^{[1
]}

Schmitt, M ^{[1
]}

Hofmann, J ^{[1
]}

Schäfer, F ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 23期

关键词：

D O I：

10.1049/el:19991352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have investigated complex coupled distributed feedback lasers based on a single layer of InGaAs/GaAs self-organised quantum dots grown by molecular beam epitaxy. Metal gratings patterned laterally in a ridge waveguide laser provide feedback for singlemode operation. Threshold currents of 14mA, differential efficiencies of 0.33W/A and sidemode suppression ratios of > 50dB have been obtained. Monomode operation was observed For temperatures from 20 to 213 degrees C.

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页码：2036 / 2037

页数：2

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