Solution Epitaxy of TiO2 Thin Films

被引：9

作者：

Chan, Kelvin Y. S. ^{[1
]}

Goh, Gregory K. L. ^{[1
]}

机构：

[1] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 07期

关键词：

CHEMICAL-VAPOR-DEPOSITION; REACTIVE SPUTTER-DEPOSITION; LIQUID-PHASE DEPOSITION; ANATASE FILMS; PHOTOCATALYTIC ACTIVITY; HYDROTHERMAL SYNTHESIS; DIELECTRIC-PROPERTIES; TITANIUM-DIOXIDE; ROOM-TEMPERATURE; GROWTH;

D O I：

10.1149/1.3125766

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Epitaxial anatase TiO2 thin films were grown on (001)-oriented single-crystal SrTiO3 substrates by liquid-phase deposition at 150 degrees C. The out-of-plane alignment of the film was found to be at least 1 order of magnitude better than many other anatase films grown at much higher temperatures. The films were very smooth and made of nanosized crystallites, formed by a repeated nucleation mechanism rather than the oriented-attachment mechanism. The films also exhibited very large dielectric dispersions, which were largely attributed to dipolar and interfacial polarizations of hydroxyl groups and water molecules. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3125766] All rights reserved.

引用

页码：D231 / D235

页数：5

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