High-mobility transparent conductive Zr-doped In2O3

被引：67

作者：

Koida, T. ^{[1
]}

Kondo, M. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2337281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical and electric properties in Zr-doped In2O3 epitaxial layers were systematically investigated. The films at Zr concentrations of 0.3-0.5 at. % are found to be superior transparent conductive oxides in transparency in near infrared wavelength region and Hall mobility compared to Sn-doped In2O3. Maximum mobilities are over 100 cm(2)/V s and corresponding carrier densities are approximately 1x10(20) cm(-3). From the relationship between the values of Hall mobility and carrier concentration of the epilayers, a number and/or effects of multicharged and neutral scattering centers of electrons seem to be reduced.

引用

页数：3

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