High-mobility transparent conductive Zr-doped In2O3

被引：67

作者：

Koida, T. ^{[1
]}

Kondo, M. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2337281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical and electric properties in Zr-doped In2O3 epitaxial layers were systematically investigated. The films at Zr concentrations of 0.3-0.5 at. % are found to be superior transparent conductive oxides in transparency in near infrared wavelength region and Hall mobility compared to Sn-doped In2O3. Maximum mobilities are over 100 cm(2)/V s and corresponding carrier densities are approximately 1x10(20) cm(-3). From the relationship between the values of Hall mobility and carrier concentration of the epilayers, a number and/or effects of multicharged and neutral scattering centers of electrons seem to be reduced.

引用

页数：3

共 20 条

[11] High electron mobility W-doped In2O3 thin films by pulsed laser deposition -: art. no. 112108 [J].

Newhouse, PF ;

Park, CH ;

Keszler, DA ;

Tate, J ;

Nyholm, PS .

APPLIED PHYSICS LETTERS, 2005, 87 (11)

[12] OPTICAL-PROPERTIES OF RF REACTIVE SPUTTERED TIN-DOPED IN2O3 FILMS [J].

OHHATA, Y ;

SHINOKI, F ;

YOSHIDA, S .

THIN SOLID FILMS, 1979, 59 (02) :255-261

[13] Parallel integration and characterization of nanoscaled epitaxial lattices by concurrent molecular layer epitaxy and diffractometry [J].

Ohnishi, T ;

Komiyama, D ;

Koida, T ;

Ohashi, S ;

Stauter, C ;

Koinuma, H ;

Ohtomo, A ;

Lippmaa, M ;

Nakagawa, N ;

Kawasaki, M ;

Kikuchi, T ;

Omote, K .

APPLIED PHYSICS LETTERS, 2001, 79 (04) :536-538

[14] SCATTERING OF CHARGE-CARRIERS IN TRANSPARENT AND CONDUCTING THIN OXIDE-FILMS WITH A NON-PARABOLIC CONDUCTION-BAND [J].

PISARKIEWICZ, T ;

ZAKRZEWSKA, K ;

LEJA, E .

THIN SOLID FILMS, 1989, 174 :217-223

[15] OXIDATION OF INTERMETALLIC COMPOUNDS .2. INTERRUPTED OXIDATION OF INSB [J].

ROSENBERG, AJ .

JOURNAL OF PHYSICAL CHEMISTRY, 1960, 64 (09) :1143-1150

[16]

SELVAN JAA, 2004, P 19 EU PVSEC PAR FR, P1346

[17] Titanium-doped indium oxide: A high-mobility transparent conductor [J].

van Hest, MFAM ;

Dabney, MS ;

Perkins, JD ;

Ginley, DS ;

Taylor, MP .

APPLIED PHYSICS LETTERS, 2005, 87 (03)

[18] High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition [J].

Warmsingh, C ;

Yoshida, Y ;

Readey, DW ;

Teplin, CW ;

Perkins, JD ;

Parilla, PA ;

Gedvilas, LM ;

Keyes, BM ;

Ginley, DS .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3831-3833

[19] Doping mechanisms of Sn in In2O3 powder studied using 119Sn Mossbauer spectroscopy and X-ray diffraction [J].

Yamada, N ;

Yasui, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A) :2856-2862

[20] Development of radio-frequency magnetron sputtered indium molybdenum oxide [J].

Yoshida, Y ;

Gessert, TA ;

Perkins, CL ;

Coutts, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04) :1092-1097

← 1 2 →