Use of an SF5+ polyatomic primary ion beam for ultrashallow depth profiling on an ion microscope secondary ion mass spectroscopy instrument

被引:38
作者
Gillen, G [1 ]
Walker, M
Thompson, P
Bennett, J
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] SEMATECH, Austin, TX 78741 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期
关键词
D O I
10.1116/1.591221
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A magnetic sector secondary ion mass spectrometry (SIMS) instrument has been fitted with a modified hot filament duoplasmatron ion source for generation of SF5+ primary ion beams for SIMS depth profiling applications. The SF5+ primary ion beam has been evaluated by depth profiling of several low energy boron ion implants, baron delta-doped structures and a Ni/Cr metal multilayer depth profiling standard reference material. Using 3.0 keV impact SF5+ bombardment at a 52 degrees impact angle with oxygen flooding gives a trailing edge decay length (Ile) for the baron implants and delta-doped layers of 1.3 nm. Under the same conditions, O-2(+) bombardment gives a trailing edge decay length (1/e) of 2.3 nm. The use of the SF5+ beam without oxygen flooding gives a substantial increase in decay length that is related to the formation of ripples as determined by atomic force microscopy. In the case of the Ni/Cr reference material, a significant reduction in sputter-induced topography is observed with SF5+ bombardment. (C) 2000 American Vacuum Society. [S0734-211X(00)01101-X].
引用
收藏
页码:503 / 508
页数:6
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