High resolution ion scattering study of silicon oxynitridation

被引：99

作者：

Lu, HC

Gusev, EP

Gustafsson, T

Garfunkel, E

Green, ML

Brasen, D

Feldman, LC

机构：

[1] RUTGERS STATE UNIV, DEPT CHEM, PISCATAWAY, NJ 08855 USA

[2] RUTGERS STATE UNIV, SURFACE MODIFICAT LAB, PISCATAWAY, NJ 08855 USA

[3] AT&T BELL LABS, LUCENT TECHNOL, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 18期

关键词：

D O I：

10.1063/1.117687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate; after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface, Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case. (C) 1996 American Institute of Physics.

引用

页码：2713 / 2715

页数：3

共 37 条

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