AN ISOTOPIC LABELING STUDY OF THE GROWTH OF THIN OXIDE-FILMS ON SI(100)

The mechanism of thin (<8 nm) oxide growth on Si(100) has been studied by high-resolution medium energy ion scattering in combination with oxygen isotope substitution in the T=800-900 degrees C and 0.1-1 Torr oxygen pressure regime. Isotopic labeling experiments demonstrate that the Deal-Grove model breaks down for these films. In addition to the traditional oxidation reaction at the Si/SiO2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region. (C) 1995 American Institute of Physics.