O-18 TRACER STUDY OF SI OXIDATION IN DRY O-2 USING SIMS

[1] ATALLA MM, 1960, PROPERTIES ELEMENTAL

[2] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1251 - &

[3] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426

[4] ISOTOPE LABELING STUDIES OF THE OXIDATION OF SILICON AT 1000-DEGREES-C AND 1300-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1944 - 1947

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[6] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196

[7] ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 589 - 591

[8] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[9] CONTROL OF FIXED CHARGE AT SI-SIO2 INTERFACE BY OXIDATION-REDUCTION TREATMENTS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 377 - 379

[10] KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1100 - +

[1] ATALLA MM, 1960, PROPERTIES ELEMENTAL

[2] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1251 - &

[3] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426

[4] ISOTOPE LABELING STUDIES OF THE OXIDATION OF SILICON AT 1000-DEGREES-C AND 1300-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1944 - 1947

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[6] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS [J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196

[7] ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 589 - 591

[8] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[9] CONTROL OF FIXED CHARGE AT SI-SIO2 INTERFACE BY OXIDATION-REDUCTION TREATMENTS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 377 - 379

[10] KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1100 - +