Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials

被引：14

作者：

Lopez, Giorgia M.

Fiorentini, Vincenzo

机构：

[1] Univ Cagliari, Sardinian Lab Computat Mat Sci, SLACS, INFM,CNR, I-09042 Cagliari, Italy

[2] Univ Cagliari, Dipartimento Fis, I-09042 Cagliari, Italy

[3] Philips Res Leuven, B-3000 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期

关键词：

D O I：

10.1063/1.2338555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on ab initio density-functional energetics for saturated (n=2m+2) fluorine-vacancy clusters FnVm for m up to 4, the authors set up a model showing that (a) fluorine-vacancy (F-V) aggregates in Si can form in any size and concentration for sufficient concentrations of incorporated (e.g., implanted) F, and (b) the F to V ratio in F-V complexes (i.e., the inverse capture efficiency of self-interstitials) is an ensemble average over many cluster sizes. It ranges between 4 and 2, with typical values of 2.2-2.5, consistent with recent experimental estimates. (c) 2006 American Institute of Physics.

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