INFLUENCE OF POINT-DEFECTS ON FORMATION OF FLUORINE BUBBLES AND CHARACTERIZATION OF DEFECTS IN BF2(+) IMPLANTED SILICON

被引：13

作者：

CHU, CH ^{[1
]}

YANG, JJ ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95031-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effects of point defect injection on the the formation of fluorine bubbles in BF2+ implanted silicon have been investigated by transmission electron microscopy (TEM). Excess silicon self-interstitial injection due to oxidation were found to be most effective in alleviating the formation of fluorine bubbles. Microstructural defects have been characterized by high resolution TEM.

引用

页码：138 / 141

页数：4

共 17 条

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