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EFFECTS OF FLUORINE IMPLANTATION ON THE KINETICS OF DRY OXIDATION OF SILICON
被引:9
作者
:
KUPER, FG
论文数:
0
引用数:
0
h-index:
0
KUPER, FG
DEHOSSON, JTM
论文数:
0
引用数:
0
h-index:
0
DEHOSSON, JTM
VERWEY, JF
论文数:
0
引用数:
0
h-index:
0
VERWEY, JF
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 60卷
/ 03期
关键词
:
D O I
:
10.1063/1.337342
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:985 / 990
页数:6
相关论文
共 16 条
[1]
BOERMA DO, UNPUB
[2]
FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON
[J].
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
CHANG, RPH
;
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
CHANG, CC
;
DARACK, S
论文数:
0
引用数:
0
h-index:
0
DARACK, S
.
APPLIED PHYSICS LETTERS,
1980,
36
(12)
:999
-1002
[3]
ANODIC-OXIDATION OF SILICON IN ORGANIC BATHS CONTAINING FLUORINE
[J].
CROSET, M
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
CROSET, M
;
DIEUMEGA.D
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
DIEUMEGA.D
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(04)
:526
-532
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DEAL, BE
;
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HESS, DW
;
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
PLUMMER, JD
;
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HO, CP
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
:339
-346
[6]
DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION
[J].
GREEUW, G
论文数:
0
引用数:
0
h-index:
0
GREEUW, G
;
VERWEY, JF
论文数:
0
引用数:
0
h-index:
0
VERWEY, JF
.
SOLID-STATE ELECTRONICS,
1983,
26
(03)
:241
-246
[7]
EFFECT OF OXIDATION-INDUCED POSITIVE CHARGES ON THE KINETICS OF SILICON OXIDATION
[J].
HAMASAKI, M
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, M
.
SOLID-STATE ELECTRONICS,
1982,
25
(06)
:479
-486
[8]
ACTIVATION-ENERGY FOR THE PARABOLIC RATE-CONSTANT DURING SEQUENTIAL SI OXIDATION
[J].
HAN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Stanford Electronics, Lab, Stanford, CA, USA, Stanford Univ, Stanford Electronics Lab, Stanford, CA, USA
HAN, CJ
;
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Stanford Electronics, Lab, Stanford, CA, USA, Stanford Univ, Stanford Electronics Lab, Stanford, CA, USA
HELMS, CR
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(02)
:516
-517
[9]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES
[J].
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
HESS, DW
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(05)
:735
-739
[10]
INFLUENCE OF FLUORINE ON OXIDATION-INDUCED STACKING-FAULTS
[J].
ISOMAE, S
论文数:
0
引用数:
0
h-index:
0
ISOMAE, S
;
TAMURA, H
论文数:
0
引用数:
0
h-index:
0
TAMURA, H
;
TSUYAMA, H
论文数:
0
引用数:
0
h-index:
0
TSUYAMA, H
.
APPLIED PHYSICS LETTERS,
1980,
36
(04)
:293
-294
←
1
2
→
共 16 条
[1]
BOERMA DO, UNPUB
[2]
FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON
[J].
CHANG, RPH
论文数:
0
引用数:
0
h-index:
0
CHANG, RPH
;
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
CHANG, CC
;
DARACK, S
论文数:
0
引用数:
0
h-index:
0
DARACK, S
.
APPLIED PHYSICS LETTERS,
1980,
36
(12)
:999
-1002
[3]
ANODIC-OXIDATION OF SILICON IN ORGANIC BATHS CONTAINING FLUORINE
[J].
CROSET, M
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
CROSET, M
;
DIEUMEGA.D
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
THOMSON-CSF,LAB CENT RECH,ORSAY 91,FRANCE
DIEUMEGA.D
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(04)
:526
-532
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DEAL, BE
;
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HESS, DW
;
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
PLUMMER, JD
;
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HO, CP
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
:339
-346
[6]
DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION
[J].
GREEUW, G
论文数:
0
引用数:
0
h-index:
0
GREEUW, G
;
VERWEY, JF
论文数:
0
引用数:
0
h-index:
0
VERWEY, JF
.
SOLID-STATE ELECTRONICS,
1983,
26
(03)
:241
-246
[7]
EFFECT OF OXIDATION-INDUCED POSITIVE CHARGES ON THE KINETICS OF SILICON OXIDATION
[J].
HAMASAKI, M
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, M
.
SOLID-STATE ELECTRONICS,
1982,
25
(06)
:479
-486
[8]
ACTIVATION-ENERGY FOR THE PARABOLIC RATE-CONSTANT DURING SEQUENTIAL SI OXIDATION
[J].
HAN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Stanford Electronics, Lab, Stanford, CA, USA, Stanford Univ, Stanford Electronics Lab, Stanford, CA, USA
HAN, CJ
;
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Stanford Electronics, Lab, Stanford, CA, USA, Stanford Univ, Stanford Electronics Lab, Stanford, CA, USA
HELMS, CR
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(02)
:516
-517
[9]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES
[J].
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
HESS, DW
;
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(05)
:735
-739
[10]
INFLUENCE OF FLUORINE ON OXIDATION-INDUCED STACKING-FAULTS
[J].
ISOMAE, S
论文数:
0
引用数:
0
h-index:
0
ISOMAE, S
;
TAMURA, H
论文数:
0
引用数:
0
h-index:
0
TAMURA, H
;
TSUYAMA, H
论文数:
0
引用数:
0
h-index:
0
TSUYAMA, H
.
APPLIED PHYSICS LETTERS,
1980,
36
(04)
:293
-294
←
1
2
→