INFLUENCE OF FLUORINE ON OXIDATION-INDUCED STACKING-FAULTS

被引：7

作者：

ISOMAE, S

TAMURA, H

TSUYAMA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：293 / 294

页数：2

共 15 条

[1]

CHANG YM, 1978, SEMICONDUCTOR CHARAC, P366

[2]

CLAEYS CL, 1977, SEMICONDUCTOR SILICO, P773

[3] CHLORINE CONCENTRATION PROFILES IN O2-HCL AND H2O-HCL THERMAL SILICON-OXIDES USING SIMS MEASUREMENTS [J].

DEAL, BE ;

HURRLE, A ;

SCHULZ, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) :2024-2027

[4] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J].

DRUM, CM ;

VANGELDE.W .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4465-&

[5] ELIMINATION OF STACKING-FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION [J].

HATTORI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :945-946

[6] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION [J].

HSIEH, CM ;

MAHER, DM .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1302-1306

[7] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :165-167

[8]

KRIEGLER RJ, 1974, J JPN SOC APPL PHYS, V43, P341

[9] RESIDUAL CHLORINE IN O2-HCL GROWN SIO2 [J].

MEEK, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (02) :308-310

[10] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].

RAVI, KV ;

VARKER, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :263-271

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