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RESIDUAL CHLORINE IN O2-HCL GROWN SIO2
被引:31
作者
:
MEEK, RL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MEEK, RL
[
1
]
机构
:
[1]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1973年
/ 120卷
/ 02期
关键词
:
D O I
:
10.1149/1.2403443
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:308 / 310
页数:3
相关论文
共 9 条
[1]
DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
论文数:
0
引用数:
0
h-index:
0
BOGH, E
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(06)
: 653
-
&
[2]
OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON
CHEN, MC
论文数:
0
引用数:
0
h-index:
0
CHEN, MC
HILE, JW
论文数:
0
引用数:
0
h-index:
0
HILE, JW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
: 223
-
+
[3]
ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
论文数:
0
引用数:
0
h-index:
0
DAVIES, JA
DENHARTO.J
论文数:
0
引用数:
0
h-index:
0
DENHARTO.J
ERIKSSON, L
论文数:
0
引用数:
0
h-index:
0
ERIKSSON, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
[J].
CANADIAN JOURNAL OF PHYSICS,
1967,
45
(12)
: 4053
-
&
[4]
KERN W, 1970, RCA REV, V31, P187
[5]
NEUTRALIZATION OF NA+ IONS IN HCL-GROWN SIO2
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(11)
: 449
-
&
[6]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[7]
MACKENNA E, 1970, OCT EL SOC M ATL CIT
[8]
ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
[J].
SURFACE SCIENCE,
1970,
22
(02)
: 263
-
&
[9]
USE OF HCI GETTERING IN SILICON DEVICE PROCESSING
ROBINSON, PH
论文数:
0
引用数:
0
h-index:
0
ROBINSON, PH
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
: 141
-
+
←
1
→
共 9 条
[1]
DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
论文数:
0
引用数:
0
h-index:
0
BOGH, E
[J].
CANADIAN JOURNAL OF PHYSICS,
1968,
46
(06)
: 653
-
&
[2]
OXIDE CHARGE REDUCTION BY CHEMICAL GETTERING WITH TRICHLOROETHYLENE DURING THERMAL OXIDATION OF SILICON
CHEN, MC
论文数:
0
引用数:
0
h-index:
0
CHEN, MC
HILE, JW
论文数:
0
引用数:
0
h-index:
0
HILE, JW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
: 223
-
+
[3]
ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
论文数:
0
引用数:
0
h-index:
0
DAVIES, JA
DENHARTO.J
论文数:
0
引用数:
0
h-index:
0
DENHARTO.J
ERIKSSON, L
论文数:
0
引用数:
0
h-index:
0
ERIKSSON, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
[J].
CANADIAN JOURNAL OF PHYSICS,
1967,
45
(12)
: 4053
-
&
[4]
KERN W, 1970, RCA REV, V31, P187
[5]
NEUTRALIZATION OF NA+ IONS IN HCL-GROWN SIO2
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
[J].
APPLIED PHYSICS LETTERS,
1972,
20
(11)
: 449
-
&
[6]
EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
KRIEGLER, RJ
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
COLTON, DR
论文数:
0
引用数:
0
h-index:
0
COLTON, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(03)
: 388
-
&
[7]
MACKENNA E, 1970, OCT EL SOC M ATL CIT
[8]
ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
MEYER, O
论文数:
0
引用数:
0
h-index:
0
MEYER, O
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
[J].
SURFACE SCIENCE,
1970,
22
(02)
: 263
-
&
[9]
USE OF HCI GETTERING IN SILICON DEVICE PROCESSING
ROBINSON, PH
论文数:
0
引用数:
0
h-index:
0
ROBINSON, PH
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(01)
: 141
-
+
←
1
→