Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies and Zn Interstitials: Origin of n-Type Doping

被引：232

作者：

Kim, Yong-Sung ^{[1
]}

Park, C. H. ^{[2
]}

机构：

[1] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

[2] Pusan Natl Univ, Dept Phys Educ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 08期

关键词：

HYDROGEN; SEMICONDUCTORS;

D O I：

10.1103/PhysRevLett.102.086403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We show that the formation of both O vacancies and Zn interstitials becomes significantly enhanced by a strong attractive interaction between them, making these defects an important source of n-type conductivity in ZnO.

引用

页数：4

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