Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes (vol 80, pg 3817, 2002)

被引：13

作者：

Wind, SJ ^{[1
]}

Appenzeller, J ^{[1
]}

Martel, R ^{[1
]}

Derycke, V ^{[1
]}

Avouris, P ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 07期

关键词：

D O I：

10.1063/1.1502905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1359 / 1359

页数：1

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