Very high frequency capacitively coupled discharges for large area processing

被引:33
作者
Meyyappan, M [1 ]
Colgan, MJ [1 ]
机构
[1] RUTGERS STATE UNIV,DEPT PHYS,NEWARK,NJ 07102
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 05期
关键词
D O I
10.1116/1.580201
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A two-dimensional fluid model is used to study the characteristics of a capacitively coupled discharge system at drive frequencies of 13.56-100 MHz. Results are presented for a large reactor that can accommodate 300 mm wafers. The plasma density and ion flux scale approximately as the square of the frequency at constant applied voltage which agrees well with measurements. The rf current, ionization rate, and sheath thickness also scale favorably with frequency. The simulations reveal that the plasma and ion characteristics are uniform across the electrode except near the edge. (C) 1996 American Vacuum Society.
引用
收藏
页码:2790 / 2794
页数:5
相关论文
共 24 条
[1]   HIGH-EFFICIENCY AMORPHOUS-SILICON P-I-N SOLAR-CELLS DEPOSITED FROM DISILANE AT RATES UP TO 2 NM/S USING VHF DISCHARGES [J].
CHATHAM, H ;
BHAT, P ;
BENSON, A ;
MATOVICH, C .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) :201-203
[2]  
Colgan M. J., 1994, Plasma Sources, Science and Technology, V3, P181, DOI 10.1088/0963-0252/3/2/009
[3]  
COLGAN MJ, 1996, HIGH DENSITY PLASMA
[4]  
COLGAN MJ, 1994, P 10 S PLASM PROC EL
[5]   HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON - EFFECT OF PLASMA EXCITATION-FREQUENCY [J].
CURTINS, H ;
WYRSCH, N ;
SHAH, AV .
ELECTRONICS LETTERS, 1987, 23 (05) :228-230
[6]   DEPENDENCE OF INTRINSIC STRESS IN HYDROGENATED AMORPHOUS-SILICON ON EXCITATION-FREQUENCY IN A PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION PROCESS [J].
DUTTA, J ;
KROLL, U ;
CHABLOZ, P ;
SHAH, A ;
HOWLING, AA ;
DORIER, JL ;
HOLLENSTEIN, C .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :3220-3222
[7]   CHARACTERISTICS OF HIGH-FREQUENCY AND DIRECT-CURRENT ARGON DISCHARGES AT LOW-PRESSURES - A COMPARATIVE-ANALYSIS [J].
FERREIRA, CM ;
LOUREIRO, J .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (06) :1175-1188
[8]  
GODYAK VA, 1986, SOVIET READIOFREQUEN
[9]   ONE-DIMENSIONAL MODELING STUDIES OF THE GASEOUS ELECTRONICS CONFERENCE RF REFERENCE CELL [J].
GOVINDAN, TR ;
MEYYAPPAN, M .
JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 1995, 100 (04) :463-472
[10]  
HORWATH R, 1995, WO0RKSH PERF SCAL PL